Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage

Autor: Du, J., Lyu, S., Jiang, K., Huang, D., Li, J., Van Deun, R., Poelman, D., Lin, H.
Zdroj: In Materials Today Chemistry June 2022 24
Databáze: ScienceDirect