Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage
Autor: | Du, J., Lyu, S., Jiang, K., Huang, D., Li, J., Van Deun, R., Poelman, D., Lin, H. |
---|---|
Zdroj: | In Materials Today Chemistry June 2022 24 |
Databáze: | ScienceDirect |
Externí odkaz: |