Suppression of p-type parasitic channel formation at the interface between the aluminum nitride nucleation layer and the high-resistivity silicon substrate
| Autor: | Lin, Pojung, Liu, Jiazhe, Lin, Hongche, Chuang, Zhiyuan, Hsu, Wenching, Chen, Yiche, Liu, Poliang, Horng, Rayhua |
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| Zdroj: | In Surfaces and Interfaces February 2023 36 |
| Databáze: | ScienceDirect |
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