Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge
| Autor: | Vaidya, Mahesh, Naugarhiya, Alok, Verma, Shrish |
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| Zdroj: | In Materials Today: Proceedings 2021 46 Part 10:4587-4592 |
| Databáze: | ScienceDirect |
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