Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications

Autor: Kim, Hyun Don, Gu, Minseon, Lee, Kyu-Myung, Ahn, Hanyeol, Byun, Jinwoo, Yon, Gukhyon, Beak, Junghyun, Lim, Hyeongjoon, Jung, Jaemo, Park, Jaehyeon, Kim, Jwa Soon, Hahm, HaeJoon, Kim, Soobang, Min, Won Ja, Hyun, Moon Seop, Chang Park, Yun, Kim, Gyungtae, Park, Yongsup, Han, Moonsup, Choi, Eunjip, Chang, Young Jun
Zdroj: In Current Applied Physics January 2025 69:21-27
Databáze: ScienceDirect