TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
| Autor: | Moon, Jeong Hyun, Kang, In Ho, Kim, Hyoung Woo, Seok, Ogyun, Bahng, Wook, Ha, Min-Woo |
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| Zdroj: | In Current Applied Physics December 2020 20(12):1386-1390 |
| Databáze: | ScienceDirect |
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