Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields

Autor: Belevskii, P.A., Vinoslavskii, M.N., Poroshin, V.N., Baidus, N.V., Zvonkov, B.N.
Zdroj: In Physica E: Low-dimensional Systems and Nanostructures November 2015 74:328-333
Databáze: ScienceDirect