Modified electrochemical charge storage properties of h-BN/rGO superlattice through the transition from n to p type semiconductor by fluorine doping

Autor: Saha, Sanjit, Samanta, Pranab, Murmu, Naresh C., Banerjee, Amit, Ganesh, R. Sankar, Inokawa, Hiroshi, Kuila, Tapas
Zdroj: In Chemical Engineering Journal 1 May 2018 339:334-345
Databáze: ScienceDirect