Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors

Autor:	Kim, Hyojung, Choi, Min-ju, Suh, Jun Min, Shim, Young-Seok, Im, In Hyuk, Hyun, Daijoon, Yang, Seok Joo, Cai, Zhicheng, Hilal, Muhammad, Lee, Mi Gyoung, Moon, Cheon Woo, Kim, Soo Young, Jang, Ho Won
Zdroj:	In Materials Science in Semiconductor Processing 1 November 2024 182
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect