Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
| Autor: | Kim, Hyojung, Choi, Min-ju, Suh, Jun Min, Shim, Young-Seok, Im, In Hyuk, Hyun, Daijoon, Yang, Seok Joo, Cai, Zhicheng, Hilal, Muhammad, Lee, Mi Gyoung, Moon, Cheon Woo, Kim, Soo Young, Jang, Ho Won |
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| Zdroj: | In Materials Science in Semiconductor Processing 1 November 2024 182 |
| Databáze: | ScienceDirect |
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