Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
Autor: | Belanche, Manuel, Yonezawa, Yoshiyuki, Heller, René, Müller, Arnold, Vockenhuber, Christof, Martinella, Corinna, Rüb, Michael, Kato, Masashi, Murata, Koichi, Tsuchida, Hidekazu, Nakayama, Koji, Grossner, Ulrike |
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Zdroj: | In Materials Science in Semiconductor Processing 15 August 2024 179 |
Databáze: | ScienceDirect |
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