Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Autor: Belanche, Manuel, Yonezawa, Yoshiyuki, Heller, René, Müller, Arnold, Vockenhuber, Christof, Martinella, Corinna, Rüb, Michael, Kato, Masashi, Murata, Koichi, Tsuchida, Hidekazu, Nakayama, Koji, Grossner, Ulrike
Zdroj: In Materials Science in Semiconductor Processing 15 August 2024 179
Databáze: ScienceDirect