Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics
| Autor: | Wen, Wei-Chen, Wang, Dong, Nakashima, Hiroshi, Yamamoto, Keisuke |
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| Zdroj: | In Materials Science in Semiconductor Processing 1 August 2023 162 |
| Databáze: | ScienceDirect |
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