Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs

Autor: Guziewicz, M. a, ⁎, Taube, A. a, Ekielski, M. a, Golaszewska, K. a, Zdunek, J. b, Bazarnik, P. b, Adamczyk-Cieslak, B. b, Szerling, A. a
Zdroj: In Materials Science in Semiconductor Processing 15 June 2019 96:153-160
Databáze: ScienceDirect