Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
Autor: | Bachir Bouiadjra, Wadi, Kadaoui, Mustapha amine, Saidane, Abdelkader, Henini, Mohamed, Shafi, Muhammad |
---|---|
Zdroj: | In Materials Science in Semiconductor Processing June 2014 22:92-100 |
Databáze: | ScienceDirect |
Externí odkaz: |