Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation

Autor: Bachir Bouiadjra, Wadi, Kadaoui, Mustapha amine, Saidane, Abdelkader, Henini, Mohamed, Shafi, Muhammad
Zdroj: In Materials Science in Semiconductor Processing June 2014 22:92-100
Databáze: ScienceDirect