High-performance (1 1 0)-surface strained-SOI MOSFETs

Autor: Mizuno, T. *, Sugiyama, N., Tezuka, T., Moriyama, Y., Nakaharai, S., Maeda, T., Takagi, S.
Zdroj: In Materials Science in Semiconductor Processing 2005 8(1):327-336
Databáze: ScienceDirect