Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C
| Autor: | Babchenko, Oleg, Vanko, Gabriel, Gerboc, Michal, Ižák, Tibor, Vojs, Marian, Lalinský, Tibor, Kromka, Alexander |
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| Zdroj: | In Diamond & Related Materials October 2018 89:266-272 |
| Databáze: | ScienceDirect |
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