Ferroelectric La-doped HfO2 deposited via chemical solution on silicon for tellurium field-effect phototransistors

Autor: Jeong, Uisik, Rho, Hyun Yeol, Cho, Haewon, Naqi, Muhammad, Oh, Joo On, Cho, Yongin, Pujar, Pavan, Kim, Sunkook
Zdroj: In Journal of Alloys and Compounds 15 December 2023 968
Databáze: ScienceDirect