Enhancement of the intensity of violet and green photoluminescence from Ge + ion-implanted SiO xN y films caused by hydrostatic pressure during annealing
| Autor: | Tyschenko, I.E. *, Zhuravlev, K.S., Vandyshev, E.N., Misiuk, A., Rebohle, L., Skorupa, W., Yankov, R.A., Popov, V.P. |
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| Zdroj: | In Optical Materials 2001 17(1):99-102 |
| Databáze: | ScienceDirect |
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