Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) 1− x(AlN) x doped with terbium and its optical emission properties
| Autor: | Weingärtner, R., Guerra Torres, J.A., Erlenbach, O., Gálvez de la Puente, G., De Zela, F., Winnacker, A. |
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| Zdroj: | In Materials Science & Engineering B 2010 174(1):114-118 |
| Databáze: | ScienceDirect |
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