Structural properties of Ge-implanted SiO 2 layers and related MOS memory effects
| Autor: | Duguay, S., Slaoui, A., Grob, J.J., Kanoun, M., Burignat, S., Souifi, A. |
|---|---|
| Zdroj: | In Materials Science & Engineering B 2005 124:488-493 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect