Si 1− x− yGe xC y alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Autor: Baribeau, J.-M *, Lockwood, D.J, Balle, J, Rolfe, S.J, Sproule, G.I
Zdroj: In Materials Science & Engineering B 2002 89(1):296-302
Databáze: ScienceDirect