Si 1− x− yGe xC y alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy
Autor: | Baribeau, J.-M *, Lockwood, D.J, Balle, J, Rolfe, S.J, Sproule, G.I |
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Zdroj: | In Materials Science & Engineering B 2002 89(1):296-302 |
Databáze: | ScienceDirect |
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