Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Autor: Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Torres, V.J.B., Briddon, P.R., Dobaczewski, L., Monakhov, E.V., Svensson, B.G.
Zdroj: In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4565-4567
Databáze: ScienceDirect