Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p- i-n diodes

Autor:	Lovergine, N., Traversa, M., Paiano, P., Farella, I., Prete, P., Cola, A., Quaranta, F., Mancini, A.M.
Zdroj:	In Nuclear Physics B (Proceedings Supplements) 2007 166:262-265
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect