Tunneling current in w-GaN/AlN(0001) structures with deep-level defects

Autor:	Razzhuvalov, A.N., Grinyaev, S.N.
Zdroj:	In Superlattices and Microstructures October 2018 122:624-630
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect