The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

Autor: Guerguis, Bavley, Cuduvally, Ramya, Morris, Richard J.H., Arcuri, Gabriel, Langelier, Brian, Bassim, Nabil
Zdroj: In Ultramicroscopy December 2024 266
Databáze: ScienceDirect