The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
Autor: | Guerguis, Bavley, Cuduvally, Ramya, Morris, Richard J.H., Arcuri, Gabriel, Langelier, Brian, Bassim, Nabil |
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Zdroj: | In Ultramicroscopy December 2024 266 |
Databáze: | ScienceDirect |
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