Analysis of gate-coupled silicon controlled rectifier on HBM protection under voltage overshoot
| Autor: | Madhusoodhanan, Syam, Sankaralingam, Rajkumar, Boselli, Gianluca, Chen, Zhong |
|---|---|
| Zdroj: | In Journal of Electrostatics November 2019 102 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect