Low-pressure oxidation for improving interface properties and voltage instability of SiO2/4H-SiC MOS capacitor
| Autor: | Wang, Zhaoyi, Lin, Zijie, Li, Jingang, Liu, Wen |
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| Zdroj: | In Applied Surface Science 1 February 2025 681 |
| Databáze: | ScienceDirect |
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