Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
| Autor: | Ťapajna, M. a, ⁎, Stoklas, R. a, Gregušová, D. a, Gucmann, F. a, Hušeková, K. a, Haščík, Š. a, Fröhlich, K. a, Tóth, L. b, Pécz, B. b, Brunner, F. c, Kuzmík, J. a |
|---|---|
| Zdroj: | In Applied Surface Science 31 December 2017 426:656-661 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect