Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling
| Autor: | Racko, Juraj, Benko, Peter, Mikolášek, Miroslav, Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Harmatha, Ladislav, Breza, Juraj |
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| Zdroj: | In Applied Surface Science 15 February 2017 395:122-130 |
| Databáze: | ScienceDirect |
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