Raman and TEM characterization of high fluence C implanted nanometric Si on insulator
| Autor: | dos Reis, R.M.S., Maltez, R.L., Moreira, E.C., Dias, Y.P., Boudinov, H. |
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| Zdroj: | In Applied Surface Science 15 July 2012 258(19):7395-7400 |
| Databáze: | ScienceDirect |
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