Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

Autor: Py, M., Saracco, E., Damlencourt, J.F., Barnes, J.P., Fabbri, J.M., Hartmann, J.M.
Zdroj: In Applied Surface Science 2011 257(22):9414-9419
Databáze: ScienceDirect