Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures
| Autor: | Shin, D.O., Sardela, M.R., Jr., Ban, S.H., Lee, N.-E., Shim, K.-H. |
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| Zdroj: | In Applied Surface Science 15 October 2004 237(1-4):139-145 |
| Databáze: | ScienceDirect |
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