In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation
| Autor: | Gaubas, E., Kovalevskij, V., Kadys, A., Gaspariunas, M., Mickevicius, J., Jasiunas, A., Remeikis, V., Uleckas, A., Tekorius, A., Vaitkus, J., Velicka, A. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 July 2013 307:370-372 |
| Databáze: | ScienceDirect |
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