Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
| Autor: | Yu, C.H., Yeh, P.H., Chen, L.J. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B August 2005 237(1-2):167-173 |
| Databáze: | ScienceDirect |
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