A novel low-temperature (Ba,Sr)TiO 3 (BST) process with [formula omitted] barrier for Gbit DRAM applications

Autor: Beitel, G., Wendt, H., Fritsch, E., Weinrich, V., Engelhardt, M., Hasler, B., Röhr, T., Bergmann, R., Scheler, U., Malek, K.-H., Nagel, N., Gschwandtner, A., Pamler, W., Hönlein, W., Dehm, C., Mazuré, C.
Zdroj: In Microelectronic Engineering 1999 48(1):299-302
Databáze: ScienceDirect
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