Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements

Autor: Dahan, Mor Mordechai, Mulaosmanovic, Halid, Levit, Or, Dünkel, Stefan, Müller, Johannes, Beyer, Sven, Yalon, Eilam
Zdroj: In Microelectronic Engineering 11 January 2025 296
Databáze: ScienceDirect