Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Autor: Sato, Daiki, Honda, Anna, Koizumi, Atsushi, Nishitani, Tomohiro, Honda, Yoshio, Amano, Hiroshi
Zdroj: In Microelectronic Engineering 15 February 2020 223
Databáze: ScienceDirect