Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

Autor: Yu, Xiao, Kang, Jian, Zhang, Rui, Cai, Wei-Li, Takenaka, Mitsuru, Takagi, Shinichi
Zdroj: In Microelectronic Engineering 1 November 2015 147:196-200
Databáze: ScienceDirect