Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
Autor: | Yu, Xiao, Kang, Jian, Zhang, Rui, Cai, Wei-Li, Takenaka, Mitsuru, Takagi, Shinichi |
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Zdroj: | In Microelectronic Engineering 1 November 2015 147:196-200 |
Databáze: | ScienceDirect |
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