Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Autor: Evseev, S.B., Nanver, L.K., Rejaei, B., Milosavljević, S.
Zdroj: In Microelectronic Engineering 1 August 2014 125:2-7
Databáze: ScienceDirect