Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
| Autor: | Park, Min Sang, Kim, Yonghyun, Lee, Kyong Taek, Kang, Chang Yong, Min, Byoung-Gi, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Lee, Jack C., Banerjee, Sanjay K., Lee, Jeong-Soo, Jammy, Raj, Jeong, Yoon-Ha |
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| Zdroj: | In Microelectronic Engineering December 2013 112:80-83 |
| Databáze: | ScienceDirect |
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