Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structure
| Autor: | Lee, Seonhaeng, Kim, Dongwoo, Kim, Cheolgyu, Oh, T.K., Cha, S.Y., Hong, S.J., Kang, Bongkoo |
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| Zdroj: | In Microelectronic Engineering 2012 91:44-49 |
| Databáze: | ScienceDirect |
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