New opportunities for SiGe and Ge channel p-FETs

Autor: Bedell, S.W., Daval, N., Khakifirooz, A., Kulkarni, P., Fogel, K., Domenicucci, A., Sadana, D.K.
Zdroj: In Microelectronic Engineering 2011 88(4):324-330
Databáze: ScienceDirect