Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics

Autor: Kwon, Hyuk-Min, Choi, Won-Ho, Han, In-Shik, Park, Sang-Uk, Park, Byoung-Seok, Zhang, Ying-Ying, Kang, Chang-Yong, Lee, Byoung-Hun, Jammy, Raj, Lee, Hi-Deok
Zdroj: In Microelectronic Engineering 2011 88(12):3415-3418
Databáze: ScienceDirect