Low-leakage MIS structures with 1.5-6 nm CaF 2 insulating layer on Si(1 1 1)

Autor: Sokolov, N.S., Grekhov, I.V., Ikeda, S., Kaveev, A.K., Krupin, A.V., Saiki, K., Tsutsui, K., Tyaginov, S.E., Vexler, M.I.
Zdroj: In Microelectronic Engineering 2007 84(9):2247-2250
Databáze: ScienceDirect