Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects

Autor: Chhun, S. *, Gosset, L.G., Casanova, N., Guillaumond, J.F., Dumont-Girard, P., Federspiel, X., Pantel, R., Arnal, V., Arnaud, L., Torres, J.
Zdroj: In Microelectronic Engineering October 2004 76(1-4):106-112
Databáze: ScienceDirect