The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy

Autor: Zhi, D., Wei, M., Dunin-Borkowski, R.E., Midgley, P.A., Pashley, D.W., Jones, T.S., Joyce, B.A., Fewster, P.F., Goodhew, P.J.
Zdroj: In Microelectronic Engineering 2004 73:604-609
Databáze: ScienceDirect