Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology

Autor: Reynard, J.P , Verove, C, Sabouret, E, Motte, P, Descouts, B, Chaton, C, Michailos, J, Barla, K
Zdroj: In Microelectronic Engineering 2002 60(1):113-118
Databáze: ScienceDirect