Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology
Autor: | Reynard, J.P ∗, Verove, C, Sabouret, E, Motte, P, Descouts, B, Chaton, C, Michailos, J, Barla, K |
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Zdroj: | In Microelectronic Engineering 2002 60(1):113-118 |
Databáze: | ScienceDirect |
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