Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
| Autor: | Diokh, Therese, Le-Roux, Elise, Jeannot, Simon, Cagli, Carlo, Jousseaume, Vincent, Nodin, Jean-François, Gros-Jean, Mickaël, Gaumer, Clement, Mellier, Maxime, Cluzel, Jacques, Carabasse, Catherine, Candelier, Philippe, De Salvo, Barbara |
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| Zdroj: | In Thin Solid Films 30 April 2013 533:24-28 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect