Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching

Autor: Baharin, A., Pinto, R.S., Mishra, U.K., Nener, B.D., Parish, G.
Zdroj: In Thin Solid Films 31 March 2011 519(11):3686-3689
Databáze: ScienceDirect