Investigation of self-assembled monolayer treatment on SiO 2 gate insulator of poly(3-hexylthiophene) thin-film transistors
Autor: | Horii, Yoshinori, Ikawa, Mitsuhiro, Sakaguchi, Koichi, Chikamatsu, Masayuki, Yoshida, Yuji, Azumi, Reiko, Mogi, Hiroshi, Kitagawa, Masahiko, Konishi, Hisatoshi, Yase, Kiyoshi |
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Zdroj: | In Thin Solid Films 2009 518(2):642-646 |
Databáze: | ScienceDirect |
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