Investigation of self-assembled monolayer treatment on SiO 2 gate insulator of poly(3-hexylthiophene) thin-film transistors

Autor: Horii, Yoshinori, Ikawa, Mitsuhiro, Sakaguchi, Koichi, Chikamatsu, Masayuki, Yoshida, Yuji, Azumi, Reiko, Mogi, Hiroshi, Kitagawa, Masahiko, Konishi, Hisatoshi, Yase, Kiyoshi
Zdroj: In Thin Solid Films 2009 518(2):642-646
Databáze: ScienceDirect